| TYPE | DESCRIPTION |
| Mfr | IceMOS Technology |
| Series | - |
| Package | Tube |
| Product Status | ACTIVE |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 10A, 10V |
| Power Dissipation (Max) | 236W (Tc) |
| Vgs(th) (Max) @ Id | 3.9V @ 250µA |
| Supplier Device Package | TO-247 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2064 pF @ 25 V |
One River Electronics Ltd.
1507, Building 1 Vanke Red Building,Jinlong Road, Buji Street,Longgang District,Shenzhen City, Guangdong Province,P.R. China
lana@oneriverhk.com
+86-755-8417 5709
