G2K2P10D3E
G2K2P10D3E
Part number:
3141-G2K2P10D3ETR-ND
Product_Category
Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Type
MOSFET P-CH ESD
Encapsulation
Package
Tape & Reel (TR)
RoHS:
NO
Quantity
5120
$0.5800
Minimun: 1
multiples: 1
Quantity
Price
Total
1
$0.5800
$0.5800
10
$0.4900
$4.9000
100
$0.3400
$34.0000
500
$0.2700
$135.0000
1000
$0.2200
$220.0000
2000
$0.1900
$380.0000
5000
$0.1800
$900.0000
10000
$0.1700
$1,700.0000
25000
$0.1700
$4,250.0000
50000
$0.1600
$8,000.0000
G2K2P10D3E NEWS
Specifications
PDF1
TYPEDESCRIPTION
MfrGoford Semiconductor
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Rds On (Max) @ Id, Vgs210mOhm @ 6A, 10V
Power Dissipation (Max)31W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device Package8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1668 pF @ 50 V
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