FBG20N04ASH
FBG20N04ASH
Part number:
4107-FBG20N04ASH-ND
Product_Category
Single FETs, MOSFETs
Manufacturer
EPC Space
Type
GAN FET HEMT 20
Encapsulation
Package
Bulk
RoHS:
YES
Quantity
175
$392.7500
Minimun: 1
multiples: 1
Quantity
Price
Total
1
$392.7500
$392.7500
10
$377.9900
$3,779.9000
FBG20N04ASH NEWS
Specifications
PDF1
TYPEDESCRIPTION
MfrEPC Space
Seriese-GaN®
PackageBulk
Product StatusACTIVE
Package / Case4-SMD, No Lead
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyGaNFET (Gallium Nitride)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Rds On (Max) @ Id, Vgs130mOhm @ 4A, 5V
Vgs(th) (Max) @ Id2.8V @ 1mA
Supplier Device Package4-SMD
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)+6V, -4V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds150 pF @ 100 V
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