| TYPE | DESCRIPTION |
| Mfr | EPC |
| Series | eGaN® |
| Package | Tape & Reel (TR) |
| Product Status | ACTIVE |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 1A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | +6V, -4V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 573 pF @ 100 V |
One River Electronics Ltd.
1507, Building 1 Vanke Red Building,Jinlong Road, Buji Street,Longgang District,Shenzhen City, Guangdong Province,P.R. China
lana@oneriverhk.com
+86-755-8417 5709
