| TYPE | DESCRIPTION |
| Mfr | International Rectifier |
| Series | HEXFET®, StrongIRFET™ |
| Package | Bulk |
| Product Status | ACTIVE |
| Package / Case | DirectFET™ Isometric ME |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 209A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.25mOhm @ 123A, 10V |
| Power Dissipation (Max) | 104W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 150µA |
| Supplier Device Package | DirectFET™ Isometric ME |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6904 pF @ 25 V |
One River Electronics Ltd.
1507, Building 1 Vanke Red Building,Jinlong Road, Buji Street,Longgang District,Shenzhen City, Guangdong Province,P.R. China
lana@oneriverhk.com
+86-755-8417 5709
